IQE PLC IQE plc: Development of IQGeVCSEL 150(TM) technology
November 02 2020 - 2:00AM
RNS Non-Regulatory
TIDMIQE
IQE PLC
02 November 2020
IQE plc
Reach
Cardiff, UK
2 November 2020
IQE announces the successful development of IQGeVCSEL 150(TM)
technology
IQE plc (AIM: IQE, "IQE" or the "Group"), the leading
manufacturer of advanced semiconductor wafer products for the
global semiconductor industry, is pleased to announce the
successful development of its IQGeVCSEL 150(TM) technology for 6"
Vertical Cavity Surface Emitting Lasers (VCSELs) on Germanium (Ge),
a critical step in the pathway to 200 mm and 300 mm VCSEL
technology.
VCSELs are a key component in telecom and 3D sensing systems.
Applications include high speed datacentre infrastructure; facial
recognition, proximity sensing and LiDAR time-of-flight sensors on
mobile handsets; in-cabin and environmental sensing for autonomous
drive vehicles; and 3D image recognition. As demand for VCSELs
grows and technical requirements become more stringent, there is
the need to scale to larger wafer diameters and demonstrate a path
for integration with leading edge CMOS technology. IQGeVCSEL
150(TM) is a key development milestone in addressing this.
Germanium substrates are readily available in diameters up to 200
mm and provide a clear route for VCSEL growth on Si substrates
(through the use of IQE's world-leading Ge on silicon templates) up
to 300 mm.
Using this unique, patent pending technology, IQE has
demonstrated device performance parity between identical VCSEL
structures grown on Ge and conventional Gallium Arsenide (GaAs).
While the conventional growth of VCSELs on 200 mm GaAs substrates
is currently virtually impossible, the use of Ge removes this
limitation. This is because Ge substrates allow for optimal strain
management, resulting in a VCSEL wafer that is 10x flatter compared
to VCSEL on GaAs. This not only simplifies the subsequent wafer
fabrication process but results in a wafer that is up to 3x more
uniform. The improved wafer flatness provides additional design
flexibility for thicker device architectures required to access
longer wavelength VCSELs. Finally, the Ge substrates are available
with zero defect density, resulting in higher quality VCSEL epi
material compared with GaAs.
Dr Rodney Pelzel, Chief Technology Officer of IQE, commented
:
"I am delighted to announce the successful development of
IQGeVCSEL 150(TM) technology. Demonstrating device parity with GaAs
but with a more uniform VCSEL wafer and improved flatness is a
highly significant milestone, and we have begun sampling with
partners and customers. In addition, this provides clear line of
sight to growth on larger diameter wafers as well as VCSEL growth
on silicon at 200 mm and 300 mm wafer sizes."
Contacts:
IQE plc
+44 (0) 29 2083 9400
Drew Nelson
Tim Pullen
Amy Barlow
Headland Consultancy (Financial PR)
+ 44 (0) 20 38054822
Andy Rivett-Carnac: +44 (0) 7968 997 365
Chloe Francklin: +44 (0)78 3497 4624
ABOUT IQE
http://iqep.com
IQE is the leading global supplier of advanced compound
semiconductor wafers and materials solutions that enable a diverse
range of applications across:
-- handset devices
-- global telecoms infrastructure
-- connected devices
-- 3D sensing
As a scaled global epitaxy wafer manufacturer, IQE is uniquely
positioned in this market which has high barriers to entry. IQE
supplies the whole market and is agnostic to the winners and losers
at chip and OEM level. By leveraging the Group's intellectual
property portfolio including know-how and patents, it produces
epitaxy wafers of superior quality, yield and unit economics.
IQE is headquartered in Cardiff UK, with c. 650 employees across
nine manufacturing locations in the UK, US, Taiwan and Singapore,
and is listed on the AIM Stock Exchange in London.
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