Vishay Intertechnology 30 V N-Channel MOSFET With Source Flip Technology Delivers Best in Class RDS(ON) Down to 0.71 mΩ in PowerPAK® 1212-F
February 14 2024 - 11:00AM
Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a
versatile new 30 V n-channel TrenchFET® Gen V power MOSFET that
delivers increased power density and enhanced thermal performance
for industrial, computer, consumer, and telecom applications.
Featuring source flip technology in the 3.3 mm by 3.3 mm PowerPAK®
1212-F package, the Vishay Siliconix SiSD5300DN provides best in
class on-resistance of 0.71 mΩ at 10 V and on-resistance times gate
charge — a critical figure of merit (FOM) for MOSFETs used in
switching applications — of 42 mΩ*nC.
Occupying the same footprint as the PowerPAK 1212-8S, the device
released today offers 18 % lower on-resistance to increase power
density, while its source flip technology reduces thermal
resistance by 63 °C/W to 56 °C/W. In addition, the SiSD5300DN’s FOM
represents a 35 % improvement over previous-generation devices,
which translates into reduced conduction and switching losses to
save energy in power conversion applications.
PowerPAK 1212-F source flip technology reverses the usual
proportions of the ground and source pads, extending the area of
the ground pad to provide a more efficient thermal dissipation path
and thus promoting cooler operation. At the same time, the PowerPAK
1212-F minimizes the extent of the switching area, which helps to
reduce the impact of trace noise. In the PowerPAK 1212-F package
specifically, the source pad dimension increases by a factor of 10,
from 0.36 mm² to 4.13 mm², enabling a commensurate improvement in
thermal performance. The PowerPAK 1212-F’s center gate design also
simplifies parallelization of multiple devices on a single-layer
PCB.
The source flip PowerPAK 1212-F package of the SiSD5300DN is
especially suitable for applications such as secondary
rectification, active clamp battery management systems (BMS), buck
and BLDC converters, OR-ing FETs, motor drives, and load switches.
Typical end products include welding equipment and power tools;
servers, edge devices, supercomputers, and tablets; lawnmowers and
cleaning robots; and radio base stations.
The device is 100 % RG- and UIS-tested, RoHS-compliant, and
halogen-free.
Key Specification Table:
PowerPAK 1212-F |
PowerPAK 1212-8S |
Package size: 3.3 mm x 3.3 mm |
Package size: 3.3 mm x 3.3 mm |
Source pad dimension: 4.13 mm² |
Source pad dimension: 0.36 mm² |
Thermal resistance: 56 °C/W |
Thermal resistance: 63 °C/W |
Lowest available on-resistance in Gen V technology:SiSD5300DN: 0.87
mΩ (maximum) |
Lowest available on-resistance in Gen V technology:SiSS54DN: 1.06
mΩ (maximum) |
Samples and production quantities of the SiSD5300DN are
available now, with lead times of 26 weeks.
Vishay manufactures one of the world’s largest portfolios of
discrete semiconductors and passive electronic components that are
essential to innovative designs in the automotive, industrial,
computing, consumer, telecommunications, military, aerospace, and
medical markets. Serving customers worldwide, Vishay is The
DNA of tech®. Vishay
Intertechnology, Inc. is a Fortune 1,000 Company listed on the NYSE
(VSH). More on Vishay at www.Vishay.com.
The DNA of tech® is a
registered trademark of Vishay Intertechnology. TrenchFET and
PowerPAK are registered trademarks of Siliconix incorporated.
Vishay on Facebook:
http://www.facebook.com/VishayIntertechnology Vishay
Twitter feed: http://twitter.com/vishayindust
Links to product
datasheet:http://www.vishay.com/ppg?62220 (SiSD5300DN)
Link to product
photo:https://www.flickr.com/photos/vishay/albums/72177720314591460
For more information please contact:Vishay
IntertechnologyPeter Henrici, +1 408
567-8400peter.henrici@vishay.com orRedpinesBob Decker, +1 415
409-0233bob.decker@redpinesgroup.com
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