Transphorm Announces Two 4-Lead TO-247 Devices, Expanding Product Portfolio for High Power Server, Renewable, Industrial Power Conversion
January 17 2024 - 8:30AM
Business Wire
New FETs Serve as an Original Design Option or
Drop-In Replacement for SiC
Transphorm, Inc. (Nasdaq: TGAN), the global leader in robust GaN
power semiconductors, today announced availability of two new
SuperGaN® devices in a 4-lead TO-247 package (TO-247-4L). The new
TP65H035G4YS and TP65H050G4YS FETs offer a 35 mOhm and 50 mOhm on
resistance respectively, complete with a kelvin-source terminal
that gives customers versatile switching capabilities with even
lower energy losses. The new products will run on Transphorm’s
well-established GaN-on-Silicon substrate manufacturing process
that is cost-effective, reliable, and well-suited for high volume
manufacturing on silicon production lines. The 50 mOhm TP65H050G4YS
FET is currently available while the 35 mOhm TP65H035G4YS FET is
sampling and slated for release in calendar Q1’2024.
Transphorm’s 4-lead SuperGaN devices can serve as an original
design-in option or as a drop-in replacement for 4-lead silicon and
SiC solutions supporting power supplies at 1 kilowatt and up in a
wide range of data center, renewables, and broad industrial
applications. As noted, the 4-lead configuration offers flexibility
to users for further improved switching performance. In a
hard-switched synchronous boost converter, the 35 mOhm SuperGaN
4-lead FET reduced losses by 15 percent at 50 kilohertz (kHz) and
by 27 percent at 100 kHz when compared to a SiC MOSFET device with
a comparable on resistance.
Transphorm’s SuperGaN FETs are known for delivering
differentiating advantages such as:
- Industry-leading robustness with a +/- 20 V gate threshold and
a 4 V noise immunity.
- Easier designability by reducing the amount of circuitry
required around the device.
- Easier drivability as FETs can pair with well-known,
off-the-shelf drivers common to silicon devices.
The TO-247-4L devices offer the same robustness, designability,
and drivability with the following core specifications:
Part Number
Vds (V) min
Rds(on) (mΩ) typ
Vth (V) typ
Id (25°C) (A) max
Package Variation
TP65H035G4YS
650
35
3.6
46.5
Source
TP65H050G4YS
650
50
4
35
Source
“We continue to expand our product portfolio to bring to market
GaN FETs that help customers leverage our SuperGaN platform
performance advantages in whatever design requirement they may
have,” said Philip Zuk, Senior Vice President, Business Development
and Marketing, Transphorm. “The four-lead TO-247 package provides
flexibility for designers and customers seeking even greater power
system loss reductions with little to no design modifications on
silicon or silicon carbide systems. It’s an important addition to
our product line as we ramp into higher power applications.”
Availability
For samples of the 35 mOhm and 50 mOhm TO-247-4L FETs, contact
Transphorm’s sales team at wwsales@transphormusa.com. Datasheets
for each device can be found at the below links:
- TP65H035G4YS datasheet:
https://www.transphormusa.com/en/document/data-sheet-tp65h035g4ys/
- TP65H050G4YS datasheet:
https://www.transphormusa.com/en/document/data-sheet-tp65h050g4ys/
About Transphorm
Transphorm, Inc., a global leader in the GaN revolution, designs
and manufactures high performance and high reliability GaN
semiconductors for high voltage power conversion applications.
Having one of the largest Power GaN IP portfolios of more than
1,000 owned or licensed patents, Transphorm produces the industry’s
first JEDEC and AEC-Q101 qualified high voltage GaN semiconductor
devices. The Company’s vertically integrated device business model
allows for innovation at every development stage: design,
fabrication, device, and application support. Transphorm’s
innovations move power electronics beyond the limitations of
silicon to achieve over 99% efficiency, 50% more power density and
20% lower system cost. Transphorm is headquartered in Goleta,
California and has manufacturing operations in Goleta and Aizu,
Japan. For more information, please visit www.transphormusa.com.
Follow us on Twitter @transphormusa and WeChat at
Transphorm_GaN.
The SuperGaN mark is a registered trademark of Transphorm, Inc.
All other trademarks are the property of their respective
owners.
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version on businesswire.com: https://www.businesswire.com/news/home/20240117581078/en/
Press Contact: Heather Ailara +1.973.567.6040
heather.ailara@transphormusa.com Investor Contacts: David
Hanover or Jack Perkins KCSA Strategic Communications
transphorm@kcsa.com
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