Micron Advances Semiconductor Research & Development Capabilities with New Boise Facility
August 14 2017 - 4:05PM
Micron (Nasdaq:MU) hosted an event at its headquarters today to
mark the opening of a new facility which will play a critical role
in the company’s research into breakthrough new memory and storage
technologies of the future. When fully equipped, the new building
will nearly double Micron’s cleanroom space dedicated to research
and development in Boise, and will support a significant expansion
of the company’s overall R&D capabilities.
This expanded facility in Boise is the focal point for
developing new semiconductor manufacturing processes and designs
for the company’s future memory and storage technologies. Once
developed in the Boise R&D center, these processes are then
transitioned into production-scale manufacturing in Micron’s
network of 12 large scale manufacturing plants (fabs) around the
world.
Commemorating this milestone, Micron President and CEO, Sanjay
Mehrotra, and Technology Development Executive Vice President,
Scott DeBoer, guided public representatives and dignitaries through
the new facility.
“Creating the world’s most advanced semiconductors is a highly
complex process,” said Mehrotra. “The work done by our
industry-leading team of scientists and engineers here in Idaho
will help shape tomorrow’s technologies, products and solutions
including future generations of phones, vehicles, and data centers,
and advance rapidly emerging trends such as artificial intelligence
and big data analytics. Today’s accomplishment of our R&D
cleanroom space marks a significant acceleration of our innovation
capabilities in Boise.”
Construction of the new clean-room facility began in October
2015 to create an expanded pristine, precision-controlled
environment for development and fabrication of advanced memory
integrated circuits leveraging Micron’s years of deep technical
expertise and innovation capability. The foundation of the building
required 24,000 cubic yards of concrete, the equivalent of a
concrete truck delivery every hour for 100 days straight. Ten
million pounds of steel were used to house this advanced research
center, and the structure contains 240 miles of wire in the
building alone, enough to reach the International Space
Station.
The Boise R&D fab lies at the heart of Micron’s global
network of innovation, and its expansion will help accelerate the
development of future generations of DRAM, NAND and emerging memory
technologies.
DeBoer highlighted that Micron’s leading-edge DRAM technology
(1Ynm) has now transitioned from Boise R&D and into Micron’s
production fab in Hiroshima, Japan. Over the past year, the R&D
team has also successfully completed
the development process in Boise for 64-layer 3D NAND,
and moved the technology from initial development in Boise all
the way through to volume production in Micron’s Singapore
fabs.
In its role as the company’s global technology development
center, Boise R&D is leading the development of the
next-generation of technologies such as future DRAM, 3D XPoint™ and
3D
NAND.
Photography from today’s ceremony is available from Micron’s
media relations team: mediarelations@micron.com
Micron Technology, Inc. Micron Technology
is a world leader in innovative memory solutions. Through our
global brands — Micron, Crucial®, Lexar® and Ballistix® — our broad
portfolio of high-performance memory technologies, including DRAM,
NAND, NOR Flash and 3D XPoint™ memory, is transforming how the
world uses information. Backed by more than 35 years of technology
leadership, Micron's memory solutions enable the world's most
innovative computing, consumer, enterprise storage, data center,
mobile, embedded and automotive applications. Micron's common stock
is traded on the Nasdaq under the MU symbol.
To learn more about Micron Technology, Inc., visit
micron.com.
Contacts:
Shanye Hudson
Investor Relations
shudson@micron.com
(208) 492-1205
Marc Musgrove
Media Relations
mmusgrove@micron.com
(208) 363-2405
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