New Class of Memory Unleashes the Performance
of PCs, Data Centers and More
NEWS HIGHLIGHTS
- Intel and Micron begin production on
new class of non-volatile memory, creating the first new memory
category in more than 25 years.
- New 3D XPoint™ technology brings
non-volatile memory speeds up to 1,000 times faster1 than NAND, the
most popular non-volatile memory in the marketplace today.
- The companies invented unique material
compounds and a cross point architecture for a memory technology
that is 10 times denser than conventional memory2.
- New technology makes new innovations
possible in applications ranging from machine learning to real-time
tracking of diseases and immersive 8K gaming.
Intel Corporation and Micron Technology, Inc. today unveiled 3D
XPoint™ technology, a non-volatile memory that has the potential to
revolutionize any device, application or service that benefits from
fast access to large sets of data. Now in production, 3D XPoint
technology is a major breakthrough in memory process technology and
the first new memory category since the introduction of NAND flash
in 1989.
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Intel and Micron invented unique material
compounds and a cross point architecture for a memory technology
that is 10 times denser than conventional memory. (Photo: Business
Wire)
The explosion of connected devices and digital services is
generating massive amounts of new data. To make this data useful,
it must be stored and analyzed very quickly, creating challenges
for service providers and system builders who must balance cost,
power and performance trade-offs when they design memory and
storage solutions. 3D XPoint technology combines the performance,
density, power, non-volatility and cost advantages of all available
memory technologies on the market today. The technology is up to
1,000 times faster and has up to 1,000 times greater endurance3
than NAND, and is 10 times denser than conventional memory.
“For decades, the industry has searched for ways to reduce the
lag time between the processor and data to allow much faster
analysis,” said Rob Crooke, senior vice president and general
manager of Intel’s Non-Volatile Memory Solutions Group. “This new
class of non-volatile memory achieves this goal and brings
game-changing performance to memory and storage solutions.”
“One of the most significant hurdles in modern computing is the
time it takes the processor to reach data on long-term storage,”
said Mark Adams, president of Micron. “This new class of
non-volatile memory is a revolutionary technology that allows for
quick access to enormous data sets and enables entirely new
applications.”
As the digital world quickly grows – from 4.4 zettabytes of
digital data created in 2013 to an expected 44 zettabytes by 20204
– 3D XPoint technology can turn this immense amount of data into
valuable information in nanoseconds. For example, retailers may use
3D XPoint technology to more quickly identify fraud detection
patterns in financial transactions; healthcare researchers could
process and analyze larger data sets in real time, accelerating
complex tasks such as genetic analysis and disease tracking.
The performance benefits of 3D XPoint technology could also
enhance the PC experience, allowing consumers to enjoy faster
interactive social media and collaboration as well as more
immersive gaming experiences. The non-volatile nature of the
technology also makes it a great choice for a variety of
low-latency storage applications since data is not erased when the
device is powered off.
New Recipe, Architecture for Breakthrough Memory
Technology
Following more than a decade of research and development, 3D
XPoint technology was built from the ground up to address the need
for non-volatile, high-performance, high-endurance and
high-capacity storage and memory at an affordable cost. It ushers
in a new class of non-volatile memory that significantly reduces
latencies, allowing much more data to be stored close to the
processor and accessed at speeds previously impossible for
non-volatile storage.
The innovative, transistor-less cross point architecture creates
a three-dimensional checkerboard where memory cells sit at the
intersection of word lines and bit lines, allowing the cells to be
addressed individually. As a result, data can be written and read
in small sizes, leading to faster and more efficient read/write
processes.
More details about 3D XPoint technology include:
- Cross Point Array Structure –
Perpendicular conductors connect 128 billion densely packed memory
cells. Each memory cell stores a single bit of data. This compact
structure results in high performance and high-density bits.
- Stackable – In addition to the
tight cross point array structure, memory cells are stacked in
multiple layers. The initial technology stores 128Gb per die across
two memory layers. Future generations of this technology can
increase the number of memory layers, in addition to traditional
lithographic pitch scaling, further improving system
capacities.
- Selector – Memory cells are
accessed and written or read by varying the amount of voltage sent
to each selector. This eliminates the need for transistors,
increasing capacity while reducing cost.
- Fast Switching Cell – With a
small cell size, fast switching selector, low-latency cross point
array and fast write algorithm, the cell is able to switch states
faster than any existing non-volatile memory technology today.
3D XPoint technology will sample later this year with select
customers, and Intel and Micron are developing individual products
based on the technology.
Multimedia Elements:
For additional information, visit:
- Media Kit – Micron / Intel
Contribute to the memory technology conversations through
Intel’s social channels:
- IT Peer Network Blogs:
communities.intel.com/community/itpeernetwork/blog
- Facebook*: www.facebook.com/Intel
- Twitter*: www.twitter.com/IntelSSD
- YouTube*:
www.youtube.com/user/channelintel
Take part in Micron’s social conversations where we’re talking
all things storage and memory:
- Innovations Blog:
www.micronblogs.com
- Twitter*:
www.twitter.com/micronstorage
- YouTube*:
www.youtube.com/microntechnology
Intel
Intel (NASDAQ: INTC) is a world leader in computing innovation.
The company designs and builds the essential technologies that
serve as the foundation for the world’s computing devices. As a
leader in corporate responsibility and sustainability, Intel also
manufactures the world’s first commercially available
“conflict-free” microprocessors. Additional information about Intel
is available at newsroom.intel.com and blogs.intel.com, and about
Intel’s conflict-free efforts at conflictfree.intel.com.
Micron Technology, Inc.
Micron Technology, Inc., is a global leader in advanced
semiconductor systems. Micron’s broad portfolio of high-performance
memory technologies—including DRAM, NAND and NOR Flash—is the basis
for solid state drives, modules, multichip packages and other
system solutions. Backed by more than 35 years of technology
leadership, Micron’s memory solutions enable the world’s most
innovative computing, consumer, enterprise storage, networking,
mobile, embedded and automotive applications. Micron's common
stock is traded on the NASDAQ under the MU symbol. To learn more
about Micron Technology, Inc., visit www.micron.com
©2015 Micron Technology, Inc. All rights reserved. Micron and
the Micron orbit logo are trademarks of Micron Technology, Inc.
Intel and 3D XPoint are trademarks of Intel Corporation in the
U.S. and/or other countries.
*All other trademarks are the property of their respective
owners.
This document contains forward looking statements. Forward
looking statements are predictions, projections and other
statements about future events that are based on current
expectations and assumptions and, as a result, are subject to risks
and uncertainties. Many factors could cause actual results to
differ materially from the forward-looking statements in this
document. A detailed discussion of the factors that could affect
Intel’s results and plans is included in Intel’s SEC filings,
including the annual report on Form 10-K.
1 Performance difference based on comparison between 3D XPoint
technology and other industry NAND2 Density difference based on
comparison between 3D XPoint technology and other industry DRAM3
Endurance difference based on comparison between 3D XPoint
technology and other industry NAND4
http://www.emc.com/leadership/digital-universe/2014iview/executive-summary.htm
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version on businesswire.com: http://www.businesswire.com/news/home/20150728005534/en/
Intel CorporationLindsey Sech,
480-552-3597lindsey.a.sech@intel.comorMicron TechnologyMelinda
Jenkins, 650-801-7957melinda.jenkins@zenogroup.com
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