Tower Semiconductor Expands its Leading-Edge Power Management Platforms Supporting Higher Power and Higher Voltage ICs
May 09 2022 - 6:00AM
Releasing its
second-generation 65nm BCD scalable power LDMOS
expanding
voltages to 24V operation and
20% lower Rdson;
and adding deep
trench isolation (DTI) to
its 180nm BCD platform enabling up to 40%
die size reduction for operation
up to 125V
Tower will present its latest power
management technologies at the
2022 PCIM conference in
Nürnberg,
Germany
MIGDAL HAEMEK,
Israel, May
9, 2022 – Tower
Semiconductor (NASDAQ/TASE: TSEM), the leading foundry of
high-value analog semiconductor solutions, today announced the
expansion of its power management platforms with the release of the
second generation of its state of the art 65nm BCD expanding
operation to 24V and reducing Rdson by 20%. The company is also
adding deep trench isolations to its 180nm BCD platform enabling up
to 40% die size reduction for voltages up to 125V. The new releases
address the increasing demand for higher power ICs at higher
voltages and power efficiency, further enhancing Tower’s leading
market position in support of the power IC market that according to
Yole Développement (Yole) will reach over $25.5B by 2026.
Tower’s 65nm BCD platform is known as the
best-in-class sub-90nm BCD technology with its leading figure of
merit in power performance, cost, and integration competitiveness.
The second-generation 65nm BCD benefits from power performance
and/or die size reduction by up to 20% due to the decrease in LDMOS
Rdson for devices up to 16V together with voltage extension to 24V
operation. These advancements firmly address the needs of the
computing and consumer markets for monolithic high-power
converters, including, high-power voltage regulator for CPU and
GPUs in addition to applications such as chargers high-power motor
drivers, and power converters.
The Company’s 180nm BCD is the industry’s
widest, best-in-class platform with respect to voltage coverage,
isolation schemes, power performance, die size, and mask count. The
180nm BCD deep trench isolation scheme (DTI) offers improved noise
immunity within a single IC, flexibility at the elevated voltages
enabling to select between multiple isolation scheme, and reduced
die size by up to 40%. All these strategic features support the
market’s increasing deployment of 48V systems that require ICs to
hold voltages up to 120V and more; and specifically address the
advancing requirements of the industrial and automotive
applications including gate drivers, power converters, motor
drivers, and automotive 48V systems with their demand for advanced
isolations in ICs with multiple voltage domains at a smaller die
size.
The Company will participate in upcoming 2022
PCIM in Nürnberg, Germany, May 10 - 12, 2022, booth: #6-431.
For additional details on the Company’s power
management technology offerings, please visit here.
About Tower Semiconductor Tower
Semiconductor Ltd. (NASDAQ: TSEM, TASE: TSEM), the leading foundry
of high-value analog semiconductor solutions, provides technology
and manufacturing platforms for integrated circuits (ICs) in
growing markets such as consumer, industrial, automotive, mobile,
infrastructure, medical and aerospace and defense. Tower
Semiconductor focuses on creating a positive and sustainable impact
on the world through long term partnerships and its advanced and
innovative analog technology offering, comprised of a broad range
of customizable process platforms such as SiGe, BiCMOS,
mixed-signal/CMOS, RF CMOS, CMOS image sensor, non-imaging sensors,
integrated power management (BCD and 700V), and MEMS. Tower
Semiconductor also provides world-class design enablement for a
quick and accurate design cycle as well as process transfer
services including development, transfer, and optimization, to IDMs
and fabless companies. To provide multi-fab sourcing and extended
capacity for its customers, Tower Semiconductor owns two
manufacturing facilities in Israel (150mm and 200mm), two in the
U.S. (200mm), three facilities in Japan (two 200mm and one 300mm)
which it owns through its 51% holdings in TPSCo and is sharing a
300mm manufacturing facility being established in Italy with ST.
For more information, please visit: www.towersemi.com.
Safe Harbor Regarding Forward-Looking
StatementsThis press release includes forward-looking
statements, which are subject to risks and uncertainties. Actual
results may vary from those projected or implied by such
forward-looking statements. A complete discussion of risks and
uncertainties that may affect the accuracy of forward-looking
statements included in this press release or which may otherwise
affect Tower’s business is included under the heading “Risk
Factors” in Tower’s most recent filings on Forms 20-F, F-3, F-4,
and 6-K, as were filed with the Securities and Exchange Commission
(the “SEC”) and the Israel Securities Authority. Tower does not
intend to update, and expressly disclaim any obligation to update,
the information contained in this release.
###
Tower Semiconductor Company
Contact: Orit Shahar | +972-74-7377440 |
oritsha@towersemi.comTower Semiconductor Investor
Relations Contact: Noit Levy |
+972-4-604-7066 | noitle@towersemi.com
- PCIM DTI Gen2 65nm_PR_Final
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