Rambus Develops R+™ DDR4/3 PHY on Samsung 28nm LPP Process
February 10 2015 - 4:30PM
Business Wire
Design achieves both high-performance and
high-efficiency for networking, computing, and consumer
applications
Rambus Inc. (NASDAQ:RMBS) today announced it has developed an
R+™ DDR4/3 PHY on the Samsung 28nm LPP process. Through the
collaboration with Samsung, Rambus has achieved a robust,
production-ready R+ DDR4/3 PHY on the power-performance optimized
28nm Low Power Plus (LPP) process. The Rambus design has been
characterized at a system level, and can be easily integrated into
a SoC.
“With the ongoing demand for data alongside the cloud driving
more and more networking, the need for faster speeds and better
bandwidth has never been more prevalent,” said Kevin Donnelly,
general manager of the Memory and Interface division at Rambus.
“Successfully taping out a production-ready R+ DDR4/3 PHY on the
Samsung 28nm LPP process is a major step in our strategic and
valued partnership. Together we are breaking the necessary ground
to achieve the best possible speeds and bandwidth required by
today’s consumer and networking devices.”
The Rambus R+ DDR4 multi-modal memory PHY enables customers to
differentiate their offerings by providing industry-leading
performance while maintaining full compatibility with industry
standard DDR4, and DDR3 interfaces. Designed for server, compute,
networking and consumer applications, the R+ DDR4 PHY delivers
versatile configuration options for both area/power optimized
consumer applications and performance intensive compute
applications. The DDR4 IP product supports data rates from 800 to
3200Mbps in a low-power process and is available in both PoP and
discrete packages.
“Our high-volume 28nm LPP technology gives SoC designers a
robust manufacturing option for a new generation of feature-rich
consumer devices,” said Shawn Han, Vice President of Foundry
Marketing, Samsung. “We are pleased to be collaborating with Rambus
to demonstrate the capabilities of Samsung's 28nm processes and the
design enablement ecosystem available for Samsung’s foundry
customer and IP partners.”
The R+ DDR4/3 design leverages the wide range of design
enablement support and expertise that Samsung offers, including
process design kits (PDKs), DFM kits, analog mixed signal reference
flow, extensive implementation services, and silicon proven logic
libraries. Rambus also utilized Samsung’s foundry assembly support
resources to provide a flip-chip packaging option on the high speed
PHY design. In addition, Samsung’s 28nm Low-Power (LP) Gate First
High-k Metal Gate (HKMG) process offers considerable power and
performance advantages to a growing spectrum of mobile, consumer
and IT infrastructure-computing applications.
RMBSTN
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About Rambus Inc.
Rambus brings invention to market. Our customizable IP cores,
architecture licenses, tools, services, and training improve the
competitive advantage of our customer’s products while accelerating
their time-to-market. Rambus products and innovations capture,
secure and move data. For more information, visit rambus.com.
MSLGROUP for RambusSam Katzen,
415-512-0770rambus@mslgroup.com
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