Wolfspeed’s Next Generation GaN HEMTs Deliver Unmatched Efficiency
September 12 2017 - 9:00AM
Business Wire
28V RF Devices Set New Industry Benchmark
Wolfspeed, A Cree Company and a leading global supplier of
GaN-on-SiC high electron mobility transistors (HEMTs) and
monolithic microwave integrated circuits (MMICs), has introduced a
new series of 28V GaN HEMT RF power devices. These new devices are
capable of higher frequency operation to 8GHz with increased
efficiency and higher gain as well as best-in-class reliability. RF
design engineers are now able to build more efficient broadband
power amplifiers for commercial and military wireless
communications and radar applications.
The new 28V GaN HEMT devices are developed using Wolfspeed’s
proven 0.25µm GaN-on-SiC process, and are designed with the same
package footprint as the previous generation of 0.4µm devices,
making it possible for RF design engineers to use them as drop-in
replacements for the earlier devices in existing designs. Available
as both packaged devices (CG2H400 Series) and bare die (CG2H800
Series), the new GaN HEMTs deliver 33% higher frequency operation
to 8GHz (from 6GHz), an additional 1.5-2.0dB of gain, as well as a
5-10% boost in operating efficiency compared to Wolfspeed’s earlier
generation devices.
“By moving to our proven 0.25µm process for these
next-generation devices, we are able to deliver significant
performance advantages to a wide range of customers while
maintaining the superior reliability these types of applications
require,” said Jim Milligan, RF and microwave director, Wolfspeed.
“Offering these new devices in the same packages as our previous
generation parts enables RF design engineers to quickly and easily
boost the performance of their RF amplifiers.”
The higher efficiency (up to 70% at PSAT) and higher bandwidth
capability makes these devices ideal for an extensive range of RF
power amplifier applications, including those for military
communications systems, radar equipment (UHF, L-, S-, C-, and
X-band), electronic warfare (EW) and electronic counter-measure
(ECM) systems, as well as commercial RF applications in the
industrial, medical, and scientific (ISM) band.
The CG2H400 Series include these packaged 28V unmatched GaN HEMT
devices:CG2H40010 – 10W, 8GHz operation with 70% efficiency
(at PSAT) and 18dB/16dB small signal gain (at 2.0GHz and 4.0GHz,
respectively)CG2H40025 – 25W, 6GHz operation with 65%
efficiency (at PSAT) and 17dB/15dB small signal gain (at 2.0GHz and
4.0GHz, respectively)CG2H40045 – 45W, 4GHz operation with
60% efficiency (at PSAT) and 18dB/14dB small signal gain (at 2.0GHz
and 4.0GHz, respectively)The CG2H400 Series devices are available
in screw-down flanged or solder-down pill packages.
The CG2H800 Series include these bare die 28V unmatched GaN HEMT
devices:CG2H80015 – 15W, 8GHz operation with 65% efficiency
(at PSAT) and 17dB/12dB small signal gain (at 4.0GHz and 8.0GHz,
respectively)CG2H80030 – 30W, 8GHz operation with 65%
efficiency (at PSAT) and 17dB/12dB small signal gain (at 4.0GHz and
8.0GHz, respectively)CG2H80060 – 60W, 8GHz operation with
65% efficiency (at PSAT) and 15dB/12dB small signal gain (at 4.0GHz
and 8.0GHz, respectively)
Compared to conventional silicon (Si) and gallium arsenide
(GaAs) devices, Wolfspeed’s GaN-on-SiC RF devices deliver higher
breakdown voltage, higher temperature operation, higher efficiency,
higher thermal conductivity, higher power density, and wider
bandwidths, all of which are critical for achieving smaller,
lighter, and more efficient microwave and RF products. Wolfspeed™
GaN-on-SiC RF devices enable next-generation broadband, public
safety, and ISM (industrial, scientific, and medical) amplifiers;
broadcast, satellite, and tactical communications amplifiers; UAV
data links; cellular infrastructure; test instrumentation; and
two-way private radios.
More information about the newly released CG2H400 and CG2H800
devices can be found here.
Attendees of European Microwave 2017 can learn more about these
devices as well as the rest of Wolfspeed’s GaN RF portfolio by
visiting them at booth #195. For more information about Wolfspeed’s
RF products and foundry services, please visit
www.wolfspeed.com/rf.
About Cree, Inc.:
Cree is a market-leading innovator of lighting-class LEDs,
lighting products and Wolfspeed power and radio frequency (RF)
semiconductors. Cree’s product families include LED lighting
systems and bulbs, blue and green LED chips, high-brightness LEDs,
lighting-class power LEDs, power-switching devices and RF devices.
Cree’s products are driving improvements in applications such as
general illumination, electronic signs and signals, satellite
communications, power supplies and inverters.
Please refer to www.cree.com for additional product and Company
information.
Cree® is a registered trademark and Wolfspeed™ is a trademark of
Cree, Inc.
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version on businesswire.com: http://www.businesswire.com/news/home/20170912005315/en/
Cree, Inc.Corporate Communications:Claire
Simmonscsimmons@cree.com
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