Technology Analysis of TSMC's Silicon Capacitor Deep Trench Capacitor - Research and Markets
June 27 2017 - 12:52PM
Business Wire
Research and Markets has announced the addition of the
"TSMCSilicon CapacitorDeep Trench Capacitor: Technology Analysis"
report to their offering.
Due to TSMC, Integrated Passive Devices (IPD) are back in the
mobile industry. Information about the Apple A10 application
processor (AP) integrated into the firm's latest flagship, the
iPhone 7, mentions the use of the first PoP Wafer Level Packaging
for consumer devices developed by TSMC, called integrated Fan-Out -
Package-on-Package (inFO-PoP). To enable this, TSMC has also
integrated a brand new technology that has never been proposed
before for high volume products. It is using high-density Deep
Trench Capacitors (DTCs) on silicon substrates as land-side
decoupling capacitors.
Located under the inFO-PoP, the Land-Side Capacitor (LSC) is in
flip-chip configuration and supported by an extra layer on the
printed circuit (PCB). The LSC has been developed by TSMC using
trench capacitors to increase the capacitive area without changing
the footprint of the component. This can compete with multilayer
ceramic capacitor (MLCC) technology.
In this report, we show the differences from ceramic technology
and the innovations of this capacitor, including the trench
silicon, oxide deposition and electrical performances. The process
is compared to IPDiA technology. Detailed comparison with the LSC
in the Exynos 8 and the Snapdragon 820 APs will explain the pros
and cons of TSMC's LSC technology.
This DTC process enables TSMC to offer a very thin capacitor,
with high density and the same footprint as a MLCC 0204 component.
The result is very cost-effective, as comparisons with ceramic
capacitors in this report will show.
For more information about this report visit
https://www.researchandmarkets.com/research/9ld33t/tsmcsilicon
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version on businesswire.com: http://www.businesswire.com/news/home/20170627006223/en/
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