Fairchild Semiconductor Expanding Technology Innovation with Silicon Carbide
April 14 2011 - 2:00PM
Business Wire
Answering the need for increasing efficiencies and higher
performance for semiconductor applications, Fairchild Semiconductor
(NYSE: FCS) is extending its technology leadership capabilities
with the acquisition of TranSiC, a Silicon Carbide (SiC) power
transistor company.
The acquisition provides Fairchild with bipolar SiC transistor
technology with demonstrated industry leading efficiencies and
excellent performance over wide temperature ranges, and superior
performance over MOSFET and JFET technology approaches. Fairchild
also acquired a team of highly experienced SiC engineers and
scientists and multiple patents in SiC technology.
“The combination of silicon carbide technology with Fairchild’s
existing capabilities in MOSFETs, IGBTs and multi-chip modules,
along with our global access to customers, positions us to continue
to be a leader in innovative, high performance power transistor
technology,” said Mark Thompson, Fairchild’s Chairman, CEO and
president.
“The performance levels achieved with SiC technology allow for
much higher efficiency in power conversion. It also offers a higher
switching speed, a feature that enables smaller end system form
factors. Silicon Carbide technology is established in the market
with a strong lead over alternatives in the wide bandgap area for
applications that require voltages greater than 600V and
demonstrates superior ruggedness and reliability,” added Dan
Kinzer, Fairchild’s Chief Technology Officer.
Benefits over alternative technologies include:
- lower on-state voltage drop for a given
chip size,
- higher current density,
- higher temperature operation,
- extremely low thermal resistance,
- ultrafast switching with only majority
carrier conduction,
- easy drive solutions due to normally
off operation with current gain in the range of 100,
- easy paralleling due to the positive
temperature coefficient of resistance.
Additionally, the device resistance is very near the theoretical
limit for SiC. Turn-on and turn-off times in the 25ns range
switching 50A from 800V have been demonstrated. Parametric
stability has been demonstrated under long term full rated bias and
current stress conditions.
These high gain SiC bipolar devices are ideal for high-power
conversion applications in down-hole drilling, solar inverters,
wind-powered inverters, electric and hybrid electric vehicles,
industrial drives, UPS and light rail traction applications. These
markets are projected by Yole Development to approach $1 billion by
2020.
This device is capable of industry leading efficiency, cutting
losses relative to established silicon approaches by up to half, or
allowing an increase of frequency by up to 4X with similar losses.
Overall system cost and value can benefit from much smaller,
lighter passive components. For systems that require the best
efficiency and power density, there is no equal.
Fairchild is sampling initial 1200V products up to 50A ratings
in targeted applications. Future offerings are in development to
expand the voltage and current range, and to continue to drive
improved energy saving.
About Fairchild Semiconductor:
Fairchild Semiconductor (NYSE: FCS) – global presence, local
support, smart ideas. Fairchild delivers energy-efficient,
easy-to-use and value-added semiconductor solutions for power and
mobile designs. We help our customers differentiate their products
and solve difficult technical challenges with our expertise in
power and signal path products. Please contact us on the web at
www.fairchildsemi.com.
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