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Period:
Draw Mode:
| Volume | 16,010 |
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| News | - | ||||||
| Day High | 0.1153 | Low High |
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| Day Low | 0.08108 | ||||||
| Company Name | Stock Ticker Symbol | Market | Type |
|---|---|---|---|
| Odyssey Semiconductor Technologies Inc (QB) | ODII | OTCMarkets | Common Stock |
| Price Change | Change Percent | Stock Price | Last Traded
|
|
|---|---|---|---|---|
| -0.01457 | -15.23% | 0.08108 | 16:14:04 |
| Open Price | Low Price | High Price | Close Price | Prev Close |
|---|---|---|---|---|
| 0.1153 | 0.08108 | 0.1153 | 0.08108 | 0.09565 |
| Trades | Volume | VWAP | Dollar Volume | Avg Volume | 52 Week Range |
|---|---|---|---|---|---|
| 3 | 16,010 | $ 0.089156 | $ 1,427 | - | 0.025 - 0.794 |
| Last Trade Time | Type | Quantity | Stock Price | Currency |
|---|---|---|---|---|
| 12:11:43 | 10,000 | $ 0.08108 | USD |
Odyssey Semiconductor Technologies Inc (QB) Financials
| Market Cap | Shares in Issue | Float | Revenue | Profit/Loss | EPS | PE Ratio |
|---|---|---|---|---|---|---|
| 1.02M | 12.73M | 5.03M | 321k | -5.69M | -0.45 | - |
| Short Interest | Dividends Per Share | Dividend Yield | Ex-Div Date | Insider B/S | Insider % Owned |
|---|---|---|---|---|---|
| - | - | - | - |
Odyssey Semiconductor Te... (QB) News
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Historical ODII Price Data
| Period | Open | High | Low | VWAP | Avg. Daily Vol | Change | % |
|---|---|---|---|---|---|---|---|
| 1 Week | 0.0725 | 0.1153 | 0.0725 | 0.0770112 | 92,725 | 0.00858 | 11.83% |
| 1 Month | 0.074 | 0.1153 | 0.07 | 0.0756983 | 24,656 | 0.00708 | 9.57% |
| 3 Months | 0.06598 | 0.1153 | 0.064 | 0.0728466 | 26,126 | 0.0151 | 22.89% |
| 6 Months | 0.0925 | 0.162 | 0.025 | 0.0646502 | 40,467 | -0.01142 | -12.35% |
| 1 Year | 0.70 | 0.794 | 0.025 | 0.0888519 | 29,066 | -0.61892 | -88.42% |
| 3 Years | 3.54 | 3.70 | 0.025 | 0.8545229 | 13,644 | -3.46 | -97.71% |
| 5 Years | 4.10 | 6.00 | 0.025 | 1.11 | 12,732 | -4.02 | -98.02% |
Odyssey Semiconductor Te... (QB) Description
| Existing high voltage switching technology used in applications such as Electric Vehicles or Solar Energy is based on silicon carbide (SiC). However, the material properties of gallium nitride (GaN) make it a far superior option over SiC for high voltage power switching applications. To date, GaN processing technology has not been able to produce a viable GaN high voltage switching transistor operating above 1,000 V. Current devices are largely horizontal conduction devices based on radio frequency (RF) designs modified to operate at high voltage. These designs are not scalable beyond 1,000 V operating voltage, which limits their use to low voltage, consumer electronics applications. Odyssey Semiconductor's unique and proprietary GaN processing technology allows for the realization of vertical current conduction GaN devices, extending application voltages from 1,000 V to over 10,000V. This allows GaN power switching devices to extend well beyond the consumer electronics application space and into more demanding applications such as Electric Vehicles, Solar Energy, Industrial Motor Control, and Energy Grid applications. |
