AXT, Inc. Retains World-Renowned Scientist Grant Elliot, Ph.D. to Extend R&D Capabilities
January 28 2008 - 9:30AM
Marketwired
FREMONT, CA , a leading manufacturer of compound semiconductor
substrates, today announced that it has retained the services of
world-renowned scientist Grant Elliot, Ph.D. to extend its research
and development activities under Chia-Li Wei, chief technology
officer, primarily in the areas of VGF technology enhancements and
Czochralski (Cz) and Liquid Encapsulated Czochralski (LEC) Crystal
Growth.
Dr. Elliot has more than 40 years of research and development
and engineering experience in materials ranging from oxides and
high temperature inter-metallic compounds to III-V semiconductors.
He spent 18 years developing and augmenting the III-V crystal
growth capability of Hewlett Packard's Optoelectronics Division.
His primary area of expertise is the LEC growth of both gallium
arsenide (GaAs) and gallium phosphide (GaP).
Dr. Elliot obtained his bachelor's of science degree in ceramic
engineering from the University of California, Berkeley and started
his career in research and development with Lockheed Missiles and
Space Co. Palo Alto Research Labs. After obtaining his master's
degree in materials science from San Jose State University, he was
awarded a Graduate Study Fellowship from Lockheed to pursue his
doctorate in materials science at Stanford University. Following a
postdoctoral fellowship appointment in the Physics Department at
Southampton University, England, he returned to Stanford University
to carry out research on ceramic materials for battery applications
and to study the liquid phase epitaxy growth of gallium arsenide on
various substrate materials. He later joined the III-V crystal
growing group at Hewlett Packard's Optoelectronics Division.
Dr. Elliot has 33 publications and one patent. He served one
term as vice president for the American Association for Crystal
Growth and was president of the American Association for Crystal
Growth/Western Region for several terms.
"We are very pleased to have retained the services of Dr.
Elliot, a leading scientist in the area of LEC growth of both
gallium arsenide and gallium phosphide," said Dr. Phil Yin,
chairman and chief executive officer. "We are very committed to
developing world-class Cz and LEC capabilities in order to broaden
our product offering into areas that we do not currently
participate in and to improve our manufacturing cost structure for
certain current products, in which these technologies offer the
most appropriate level of performance. We continue to focus on our
internal competencies with an eye towards providing a more
comprehensive product offering to meet our customers' future device
requirements."
About AXT, Inc.
AXT designs, develops, manufactures and distributes
high-performance compound and single element semiconductor
substrates comprising gallium arsenide (GaAs), indium phosphide
(InP) and germanium (Ge) through its manufacturing facilities in
Beijing, China. In addition, AXT maintains its sales,
administration and customer service functions at its headquarters
in Fremont, California. The company's substrate products are used
primarily in lighting display applications, wireless
communications, and fiber optic communications. Its vertical
gradient freeze (VGF) technique for manufacturing semiconductor
substrates provides significant benefits over other methods and
enabled AXT to become a leading manufacturer of such substrates,
particularly in optoelectronics applications. AXT has manufacturing
facilities in China and invests in five joint ventures producing
raw materials. For more information, see AXT's website at
http://www.axt.com.
Safe Harbor Statement
The foregoing paragraphs contain forward-looking statements
within the meaning of the Federal Securities laws, including
statements related to the future performance of the company and our
ability to develop world-class Cz and LEC capabilities, broaden our
product offering, improve our manufacturing cost structure and
provide a more comprehensive product offering to meet our
customers' future device requirements. These forward-looking
statements are based upon specific assumptions that are subject to
uncertainties and factors relating to the company's operations and
business environment, which could cause actual results of the
company to differ materially from those expressed or implied in the
forward-looking statements contained in the foregoing discussion.
These uncertainties and factors include but are not limited to the
impact of customer qualification of our products, improvements in
our production processes, product quality and yields, cost and
supply of raw materials, the impact of technology developments
providing new markets for GaAs and Ge substrates, overall
conditions in the markets in which the company competes as well as
market conditions and trends; market acceptance and demand for the
company's products; and other factors as set forth in the company's
annual report on Form 10-K and other filings made with the
Securities and Exchange Commission. Each of these factors is
difficult to predict and many are beyond the company's control. The
company does not undertake any obligation to update publicly any
forward-looking statement, as a result of new information, future
events or otherwise.
Contacts: Wilson W. Cheung Chief Financial Officer (510)
683-5900 Leslie Green Green Communications Consulting, LLC (650)
312-9060
AXT (NASDAQ:AXTI)
Historical Stock Chart
From May 2024 to Jun 2024
AXT (NASDAQ:AXTI)
Historical Stock Chart
From Jun 2023 to Jun 2024