Micron Ships World’s First 232-Layer NAND, Extends Technology Leadership
July 26 2022 - 9:00AM
Micron Technology, Inc. (Nasdaq: MU), today announced that it has
begun volume production of the world’s first 232-layer NAND, built
with industry-leading innovations to drive unprecedented
performance for storage solutions. It features the industry’s
highest areal density and delivers higher capacity and improved
energy efficiency over previous generations of Micron NAND, to
enable best-in-class support of the most data-intensive use cases
from client to cloud.
“Micron’s 232-layer NAND is a watershed moment for storage
innovation as first proof of the capability to scale 3D NAND to
more than 200 layers in production,” said Scott DeBoer,
executive vice president of technology and products at Micron.
“This groundbreaking technology required extensive innovation,
including advanced process capabilities to create high aspect ratio
structures, novel materials advancements and leading-edge design
enhancements that build on our market-leading 176-layer NAND
technology.”
Leading-Edge Technology Delivers Unrivaled
PerformanceAs the world generates more data, customers
must expand their storage capacity and performance while reducing
energy consumption and meeting more stringent environmental
sustainability requirements. Micron’s 232-layer NAND technology
provides the high-performance storage necessary to support advanced
solutions and real-time services required in data center and
automotive applications, as well as responsive, immersive
experiences on mobile devices, consumer electronics and PCs. This
technology node enables the introduction of the industry’s fastest
NAND I/O speed ‒ 2.4 gigabytes per second (GB/s) ‒ to meet the
low-latency and high-throughput needs of data-centric workloads
such as artificial intelligence and machine learning, unstructured
databases and real-time analytics, and cloud computing.1 That speed
represents a 50% faster data transfer than the fastest interface
enabled on Micron’s 176-layer node.2 Micron 232-layer NAND also
delivers up to 100% higher write bandwidth and more than 75% higher
read bandwidth per die than the prior generation.2 These per-die
benefits translate to performance and energy efficiency gains in
SSDs and embedded NAND solutions.
In addition, 232-layer NAND introduces the world’s first
six-plane TLC production NAND.3 It has the most planes per die of
any TLC flash3 and features independent read capability in each
plane. The combination of high I/O speed, read and write latency,
and Micron’s six-plane architecture provides best-in-class data
transfers in many configurations. This structure ensures fewer
collisions between write and read commands and drives system-level
quality-of-service improvements.
Micron’s 232-layer NAND is the first in production to enable
NV-LPDDR4, a low-voltage interface that delivers per-bit transfer
savings of more than 30% compared to prior I/O interfaces. As a
result, 232-layer NAND solutions offer ideal support for mobile
applications and deployments in the data center and at the
intelligent edge that must balance improved performance with low
power consumption. The interface is also backward compatible to
support legacy controllers and systems.
The compact form factor of 232-layer NAND offers customers
flexibility in their designs while enabling the highest TLC density
per square millimeter ever produced (at 14.6 Gb/mm2).3 The areal
density is between 35% and 100% greater than competing TLC products
in the market today.3 Shipping in a new 11.5mm x 13.5mm package,
232-layer NAND features a 28% smaller package size than previous
Micron generations,2 making it the smallest high-density NAND
available.3 More density in a smaller footprint minimizes board
space for a diverse set of deployments.
Next-Generation NAND Enables Innovation Across
Markets“Micron has sustained technology leadership with
successive first-to-market advancements in NAND layer count that
enable benefits like longer battery life and more compact storage
for mobile devices, better performance in cloud computing, and
faster training of AI models,” said Sumit Sadana, chief
business officer at Micron. “Our 232-layer NAND is the new
foundation and standard for end-to-end storage innovation
underpinning digital transformation across industries.”
The development of 232-layer NAND is the result of Micron’s
leadership in research, development and process technology
advancements. The breakthrough capabilities of this NAND will
enable customers to deliver more innovative solutions in data
centers, thinner and lighter laptops, the latest mobile devices and
across the intelligent edge.
AvailabilityMicron’s 232-layer NAND is now in
volume production in the company’s Singapore fab. It is initially
shipping to customers in component form and through its Crucial SSD
consumer product line. Additional product and availability
announcements will follow.
Micron's NAND Center of Excellence in Singapore is recognized by
the World Economic Forum’s Global Lighthouse Network for
operational excellence in smart manufacturing. Advancements
including AI tools, smart control systems and predictive
capabilities allow Micron to accelerate product development,
improve quality and achieve faster manufacturing yield ramps to
shorten the time to market.
Additional Resources
- Micron 232-layer NAND
technology
About Micron Technology, Inc.We are an industry
leader in innovative memory and storage solutions transforming how
the world uses information to enrich life for all. With a
relentless focus on our customers, technology leadership, and
manufacturing and operational excellence, Micron delivers a rich
portfolio of high-performance DRAM, NAND and NOR memory and storage
products through our Micron® and Crucial® brands. Every day, the
innovations that our people create fuel the data economy, enabling
advances in artificial intelligence and 5G applications that
unleash opportunities — from the data center to the intelligent
edge and across the client and mobile user experience. To learn
more about Micron Technology, Inc. (Nasdaq: MU), visit
micron.com.
© 2022 Micron Technology, Inc. All rights reserved. Information,
products, and/or specifications are subject to change without
notice. Micron, the Micron logo, and all other Micron trademarks
are the property of Micron Technology, Inc. All other trademarks
are the property of their respective owners.
1 NAND I/O speed is 1.6GB/s at the time of market introduction2
Based on comparison of Micron product data sheets3 Based on
comparison of NAND currently shipping in market
A photo accompanying this announcement is available at
https://www.globenewswire.com/NewsRoom/AttachmentNg/00c4d618-332b-4ff9-b127-d78f67cd92e3
Micron Media Relations Contact
Allison L. Parker
Micron Technology, Inc.
+1 (206) 579-3767
allisonparke@micron.com
Micron Investor Relations Contact
Farhan Ahmad
Micron Technology, Inc.
+1 (408) 834-1927
farhanahmad@micron.com
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