Annual cadence of innovations drives
leadership from silicon to system.
NEWS HIGHLIGHTS
- Roadmap of process and packaging innovations to power next wave
of products through 2025 and beyond.
- Two breakthrough process technologies: RibbonFET, Intel’s first
new transistor architecture in more than a decade, and PowerVia, an
industry-first for backside power delivery.
- Continued leadership in advanced 3D packaging innovations with
Foveros Omni and Foveros Direct.
- New node naming to create consistent framework, more accurate
view of process nodes for customers and the industry as Intel
enters the angstrom era of semiconductors.
- Strong momentum for Intel Foundry Services (IFS) with first
customer announcements.
Intel Corporation today revealed one of the most detailed
process and packaging technology roadmaps the company has ever
provided, showcasing a series of foundational innovations that will
power products through 2025 and beyond. In addition to announcing
RibbonFET, its first new transistor architecture in more than a
decade, and PowerVia, an industry-first new backside power delivery
method, the company highlighted its planned swift adoption of
next-generation extreme ultraviolet lithography (EUV), referred to
as High Numerical Aperture (High NA) EUV. Intel is positioned to
receive the first High NA EUV production tool in the industry.
This press release features multimedia. View
the full release here:
https://www.businesswire.com/news/home/20210726005136/en/
Pat Gelsinger, CEO of Intel Corporation,
speaks during a virtual presentation as part of the "Intel
Accelerated" event on July 26, 2021. At the event, Intel presented
the company's future process and packaging technology roadmaps.
(Credit: Intel Corporation)
“Building on Intel’s unquestioned leadership in advanced
packaging, we are accelerating our innovation roadmap to ensure we
are on a clear path to process performance leadership by 2025,”
Intel CEO Pat Gelsinger said during the global “Intel Accelerated”
webcast. “We are leveraging our unparalleled pipeline of innovation
to deliver technology advances from the transistor up to the system
level. Until the periodic table is exhausted, we will be relentless
in our pursuit of Moore’s Law and our path to innovate with the
magic of silicon.”
More: Process & Packaging Innovations (Press Kit) |
“Intel Accelerated” Webcast (Event Livestream/Replay) |
Accelerating Process Innovation (Fact Sheet) | Accelerating Process
Innovation (Quotes) | Intel Introduces New RibbonFET and PowerVia
Technologies (Video) | Intel EMIB Technology Explained (Video) |
Intel Foveros Technology Explained (Video)
The industry has long recognized that traditional
nanometer-based process node naming stopped matching the actual
gate-length metric in 1997. Today, Intel introduced a new naming
structure for its process nodes, creating a clear and consistent
framework to give customers a more accurate view of process nodes
across the industry. This clarity is more important than ever with
the launch of Intel Foundry Services. “The innovations unveiled
today will not only enable Intel’s product roadmap; they will also
be critical for our foundry customers,” Gelsinger said. “The
interest in IFS has been strong and I’m thrilled that today we
announced our first two major customers. IFS is off to the
races!”
Intel technologists described the following roadmap with the new
node names and the innovations enabling each node:
- Intel 7 delivers an approximately 10% to 15%
performance-per-watt increase versus Intel 10nm SuperFin, based on
FinFET transistor optimizations. Intel 7 will be featured in
products such as Alder Lake for client in 2021 and Sapphire Rapids
for the data center, which is expected to be in production in the
first quarter of 2022.
- Intel 4 fully embraces EUV lithography to print
incredibly small features using ultra-short wavelength light. With
an approximately 20% performance-per-watt increase, along with area
improvements, Intel 4 will be ready for production in the second
half of 2022 for products shipping in 2023, including Meteor Lake
for client and Granite Rapids for the data center.
- Intel 3 leverages further FinFET optimizations and
increased EUV to deliver an approximately 18% performance-per-watt
increase over Intel 4, along with additional area improvements.
Intel 3 will be ready to begin manufacturing products in the second
half of 2023.
- Intel 20A ushers in the angstrom era with two
breakthrough technologies, RibbonFET
and PowerVia. RibbonFET, Intel’s
implementation of a gate-all-around transistor, will be the
company’s first new transistor architecture since it pioneered
FinFET in 2011. The technology delivers faster transistor switching
speeds while achieving the same drive current as multiple fins in a
smaller footprint. PowerVia is Intel’s unique industry-first
implementation of backside power delivery, optimizing signal
transmission by eliminating the need for power routing on the front
side of the wafer. Intel 20A is expected to ramp in 2024. The
company is also excited about the opportunity to partner with
Qualcomm using its Intel 20A process technology.
- 2025 and Beyond: Beyond Intel 20A, Intel 18A is already
in development for early 2025 with refinements to RibbonFET that
will deliver another major jump in transistor performance. Intel is
also working to define, build and deploy next-generation High NA
EUV, and expects to receive the first production tool in the
industry. Intel is partnering closely with ASML to assure the
success of this industry breakthrough beyond the current generation
of EUV.
“Intel has a long history of foundational process innovations
that have propelled the industry forward by leaps and bounds,” said
Dr. Ann Kelleher, senior vice president and general manager of
Technology Development. “We led the transition to strained silicon
at 90nm, to high-k metal gates at 45nm and to FinFET at 22nm. Intel
20A will be another watershed moment in process technology with two
groundbreaking innovations: RibbonFET and PowerVia.”
With Intel’s new IDM 2.0 strategy, packaging is becoming even
more important to realizing the benefits of Moore’s Law. Intel
announced that AWS will be the first customer to use IFS packaging
solutions, while also providing the following insights into the
company’s industry-leading advanced packaging roadmap:
- EMIB continues to lead the industry as the first 2.5D
embedded bridge solution, with products shipping since 2017.
Sapphire Rapids will be the first Intel® Xeon® data center product
to ship in volume with EMIB (embedded multi-die interconnect
bridge). It will also be the first dual-reticle-sized device in the
industry, delivering nearly the same performance as a monolithic
design. Beyond Sapphire Rapids, the next generation of EMIB will
move from a 55-micron bump pitch to 45 microns.
- Foveros leverages wafer-level packaging capabilities to
provide a first-of-its-kind 3D stacking solution. Meteor Lake will
be the second-generation implementation of Foveros in a client
product and features a bump pitch of 36 microns, tiles spanning
multiple technology nodes and a thermal design power range from 5
to 125W.
- Foveros Omni ushers in the next generation of Foveros
technology by providing unbounded flexibility with performance 3D
stacking technology for die-to-die interconnect and modular
designs. Foveros Omni allows die disaggregation, mixing multiple
top die tiles with multiple base tiles across mixed fab nodes and
is expected to be ready for volume manufacturing in 2023.
- Foveros Direct moves to direct copper-to-copper bonding
for low-resistance interconnects and blurs the boundary between
where the wafer ends and where the package begins. Foveros Direct
enables sub-10-micron bump pitches, providing an order of magnitude
increase in the interconnect density for 3D stacking, opening new
concepts for functional die partitioning that were previously
unachievable. Foveros Direct is complementary to Foveros Omni and
is also expected to be ready in 2023.
The breakthroughs discussed today were primarily developed at
Intel’s facilities in Oregon and Arizona, cementing the company’s
role as the only leading-edge player with both research and
development and manufacturing in the U.S. Additionally, the
innovations draw on close collaboration with an ecosystem of
partners in both the U.S. and Europe. Deep partnerships are key to
bringing foundational innovations from the lab to high-volume
manufacturing, and Intel is committed to partnering with
governments to strengthen supply chains and drive economic and
national security.
The company closed its webcast by confirming more details on its
Intel InnovatiON event. Intel InnovatiON will be held in San
Francisco and online on Oct. 27-28, 2021. More information is
available at the Intel ON website.
For more information on Intel’s process roadmap and node naming,
visit the process factsheet. To watch a replay of today’s webcast,
visit the Intel Newsroom or Intel’s investor relations website.
About Intel
Intel (Nasdaq: INTC) is an industry leader, creating
world-changing technology that enables global progress and enriches
lives. Inspired by Moore’s Law, we continuously work to advance the
design and manufacturing of semiconductors to help address our
customers’ greatest challenges. By embedding intelligence in the
cloud, network, edge and every kind of computing device, we unleash
the potential of data to transform business and society for the
better. To learn more about Intel’s innovations, go to
newsroom.intel.com and intel.com.
Forward-Looking Statements
This press release contains forward-looking statements relating
to Intel’s future plans and expectations, including with respect to
Intel’s process and packaging technology roadmaps and schedules;
innovation cadence; future technology and products and the expected
benefits and availability of such technology and products,
including PowerVia, RibbonFET, Foveros Omni, and Foveros Direct
technologies, future process nodes, and other technologies and
products; technology parity and leadership; future use, benefits,
and availability of EUV and other manufacturing tools; expectations
regarding suppliers, partners, and customers; Intel’s strategy;
manufacturing plans; manufacturing expansion and investment plans;
and plans and goals related to Intel’s foundry business. Such
statements involve a number of risks and uncertainties. Words such
as “anticipates,” “expects,” “intends,” “goals,” “plans,”
“believes,” “seeks,” “estimates,” “continues,” “may,” “will,”
“would,” “should,” “could,” “strategy,” “progress,” “accelerate,”
“path,” “on-track,” “roadmap,” “pipeline,” “cadence,” “momentum,”
“positioned,” “committed,” and “deliver” and variations of such
words and similar expressions are intended to identify
forward-looking statements. Statements that refer to or are based
on estimates, forecasts, projections, and uncertain events or
assumptions also identify forward-looking statements. Such
statements are based on management’s current expectations and
involve many risks and uncertainties that could cause actual
results to differ materially from those expressed or implied in
these forward-looking statements. Important factors that could
cause actual results to differ materially from the company’s
expectations include, among others, Intel’s failure to realize the
anticipated benefits of its strategy and plans; changes in plans
due to business, economic, or other factors; actions taken by
competitors, including changes in competitor technology roadmaps;
changes impacting our projections regarding our technology or
competing technology; delays in development or implementation of
our future manufacturing technologies or failures to realize the
anticipated benefits of such technologies, including expected
improvements in performance and other factors; delays or changes in
the design or introduction of future products; changes in customer
needs or plans; changes in technology trends; our ability to
rapidly respond to technological developments; delays, changes in
plans, or other disruptions involving manufacturing tool and other
suppliers; and other factors set forth in Intel’s reports filed or
furnished with the Securities and Exchange Commission (SEC),
including Intel’s most recent reports on Form 10-K and Form 10-Q,
available at Intel’s investor relations website at www.intc.com and
the SEC’s website at www.sec.gov. Intel does not undertake, and
expressly disclaims any duty, to update any statement made in this
press release, whether as a result of new information, new
developments or otherwise, except to the extent that disclosure may
be required by law.
All product and service plans, roadmaps, and performance figures
are subject to change without notice. Process performance parity
and leadership expectations are based on performance-per-watt
projections. Future node performance and other metrics, including
power and density, are projections and are inherently
uncertain.
© Intel Corporation. Intel, the Intel logo and other Intel marks
are trademarks of Intel Corporation or its subsidiaries. Other
names and brands may be claimed as the property of others.
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Agnes Kwan 1-408-765-5714 agnes.ck.kwan@intel.com
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