STMicroelectronics to build integrated Silicon Carbide substrate manufacturing facility in Italy
October 05 2022 - 2:00AM
STMicroelectronics to build integrated
Silicon Carbide substrate manufacturing
facility in Italy
- First-of-a-kind SiC epitaxial substrate manufacturing facility
in Europe
- Full vertical integration to reinforce substrate supply for SiC
devices and solutions enabling automotive and industrial customers
in their shift to electrification and higher efficiency
Geneva, Switzerland, October 5, 2022
– STMicroelectronics (NYSE: STM), a global
semiconductor leader serving customers across the spectrum of
electronics applications, will build an integrated Silicon Carbide
(SiC) substrate manufacturing facility in Italy to support the
increasing demand from ST’s customers for SiC devices across
automotive and industrial applications as they transition to
electrification and seek higher efficiency. Production is expected
to start in 2023, enabling a balanced supply of SiC substrate
between internal and merchant supply.
The SiC substrate manufacturing facility, built at ST’s Catania
site in Italy alongside the existing SiC device manufacturing
facility, will be a first of a kind in Europe for the production in
volume of 150mm SiC epitaxial substrates, integrating all steps in
the production flow. ST is committed to develop 200mm wafers in the
next future.
This project is a key step in advancing ST’s vertical
integration strategy for its SiC business. The investment of €730
million over five years will be supported financially by the State
of Italy in the framework of the National Recovery and Resilience
Plan and it will create around 700 direct additional jobs at full
build-out.
“ST is transforming its global manufacturing operations, with
additional capacity in 300mm manufacturing and a strong focus on
wide bandgap semiconductors to support its $20+B revenue ambition.
We are expanding our operations in Catania, the center of our power
semiconductor expertise and where we already have integrated
research, development and manufacturing of SiC with strong
collaboration with Italian research entities, universities and
suppliers” said Jean-Marc Chery, President and Chief Executive
Officer of STMicroelectronics. “This new facility will be key to
our vertical integration in SiC, reinforcing our SiC substrate
supply as we further ramp up volumes to support our automotive and
industrial customers in their shift to electrification and higher
efficiency”.
ST’s leadership in SiC is the result of 25 years of focus and
commitment in R&D with a large portfolio of key patents.
Catania has long been an important site for innovation for ST as
the home of the largest SiC R&D and manufacturing operations,
successfully contributing to the development of new solutions for
producing more and better SiC devices. With an established
eco-system on power electronics, including a long-term, successful
collaboration between ST and different stakeholders (the
University, the CNR -Italian National Research Council-, companies
involved in equipment and product manufacturing) as well as a large
network of suppliers, this investment will strengthen Catania’s
role as a global competence center for Silicon Carbide technology
and for further growth opportunities.
ST’s leading-edge, high-volume STPOWER SiC products are
currently manufactured in its fabs in Catania and Ang Mo Kio
(Singapore). Assembly and test are done at back-end sites in
Shenzhen (China) and Bouskoura (Morocco). The investment in this
SiC substrate manufacturing facility builds on this expertise and
is a significant milestone on ST’s path towards reaching 40%
internal substrate sourcing by 2024.
About STMicroelectronicsAt ST, we are 48,000
creators and makers of semiconductor technologies mastering the
semiconductor supply chain with state-of-the-art manufacturing
facilities. An integrated device manufacturer, we work with more
than 200,000 customers and thousands of partners to design and
build products, solutions, and ecosystems that address their
challenges and opportunities, and the need to support a more
sustainable world. Our technologies enable smarter mobility, more
efficient power and energy management, and the wide-scale
deployment of the Internet of Things and connectivity. ST is
committed to becoming carbon neutral by 2027. Further information
can be found at www.st.com.
For further information, please contact:
INVESTOR RELATIONSCeline BerthierGroup VP, Investor RelationsTel
+41 22 929 58 12celine.berthier@st.com
MEDIA RELATIONSAlexis BretonCorporate External CommunicationsTel
+336 5916 7908alexis.breton@st.com
- C3124C - Catania SiC substrates press release
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