Transphorm’s SuperGaN FETs Power Boco Electronics’ Highly Efficient Crypto Mining Power Supply
March 22 2022 - 7:30AM
Business Wire
GaN Devices Designed for High Power, Mission
Critical Applications Give 3.6 kW Power Supply Unit High
Reliability at Lower Overall System Cost
Transphorm, Inc. (Nasdaq: TGAN)—a pioneer in and global supplier
of high reliability, high performance gallium nitride (GaN) power
conversion products—along with Boco Electronics today released that
the electronics company’s 3.6 kW power supply uses SuperGaN® FETs.
The robust 12-volt AC-to-DC power supply achieves a peak efficiency
of greater than 96% and is designed to be used in rugged
environments caused by ultra-demanding applications such as crypto
mining rigs and high-performance datacenter systems. Driven by
Transphorm’s SuperGaN devices in a patented bridgeless totem-pole
PFC topology, that power efficiency rating is nearly 1 percent
higher or 36 Watts lower power consumption than what Boco
Electronics achieves in traditional PFC configurations. The
totem-pole PFC topology along with the FET’s TO-247 package also
enables reduction of the overall power system’s component count, in
turn reducing the overall system cost.
“Mining rigs run 24 hours a day, seven days a week. Given this,
our customers seek higher power, higher efficiency, higher
reliability power supplies to support these intensive
applications,” said Golden Yin, CEO, Hangzhou Boco Electronics Co.,
LTD. “We knew we could meet those requirements by matching our
strong design capabilities with advanced GaN solutions. Whereas GaN
was the right technology in general, Transphorm’s SuperGaN products
were the right devices. They proved to be better suited for the
higher power ranges while offering the higher field reliability
required by such industrial applications when compared to
alternative options.”
The Transphorm device used in the power supply is the
JEDEC-qualified TP65H035G4WS, a normally-off 650-volt device with
an on resistance of 35 milliohms. Part of the SuperGaN Gen IV
product family, it offers an industry-leading ±20 volt gate
robustness with the industry’s best noise immunity threshold of 4
volts.
With faster switching and lower losses, Transphorm’s GaN
replaces traditional MOSFETs used by Boco Electronics in similar
incumbent power supplies. Further, it allows Boco Electronics to
use the advanced totem-pole PFC in lieu of an interleaving H (full
bridge) PFC or interleaving DCM PFC. The system’s resulting power
density increased, allowing for additional space for increased
cooling air flow. Notably, development of the power supply took
only six months, aligning with the ease of drivability and
designability synonymous with Transphorm's devices.
“Power hungry applications like crypto mining—which solve
complex mathematical problems while processing massive amounts of
data—are increasingly more expensive to support, from hardware to
raw energy resources. In fact, mining farms that used to benefit
from local government support and cheaper energy delivery through
hydropower in China are now being forced to relocate as a result of
regulatory changes,1” said Kenny Yim, Vice President of Asia
Pacific Sales, Transphorm. “As a result, we’re seeing manufacturers
of related high power application systems turn to GaN for
remarkably better performance and efficiency to combat higher
electricity prices. It’s a trend we’re proud to support as we
continue to strengthen and enhance our GaN platform.”
Transphorm’s role in Boco Electronics’ product development
process went beyond supplying transistors. The semiconductor
company’s technical support team collaborated with the Boco
Electronics engineering team on design reviews to ensure the GaN
technology was maximized for the highest performance output
possible.
Availability
The 3.6 kW power supply is currently available.
About Transphorm
Transphorm, Inc., a global leader in the GaN revolution, designs
and manufactures high performance and high reliability GaN
semiconductors for high voltage power conversion applications.
Having one of the largest Power GaN IP portfolios of more than
1,000 owned or licensed patents, Transphorm produces the industry’s
first JEDEC and AEC-Q101 qualified high voltage GaN semiconductor
devices. The Company’s vertically integrated device business model
allows for innovation at every development stage: design,
fabrication, device, and application support. Transphorm’s
innovations are moving power electronics beyond the limitations of
silicon to achieve over 99% efficiency, 40% more power density and
20% lower system cost. Transphorm is headquartered in Goleta,
California and has manufacturing operations in Goleta and Aizu,
Japan. For more information, please visit www.transphormusa.com.
Follow us on Twitter @transphormusa and WeChat @
Transphorm_GaN.
The SuperGaN mark is a registered trademark of Transphorm, Inc.
All other trademarks are the property of their respective
owners.
____________________
1 Feng, Coco. “Chinese bitcoin miner exodus faces hurdles as
equipment remains stuck from shipment delays, tariffs and legal
quagmire.” South China Morning Post, Feb 12, 2022.
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Heather Ailara 211 Communications +1.973.567.6040
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