POET Technologies Announces Completion and Availability of POET
Technology Design Kit Documentation (POET/TDK)
TORONTO, ONTARIO and STORRS, CONNECTICUT--(Marketwired - Apr 7,
2014) - POET Technologies Inc. (TSX-VENTURE:PTK)(OTCQX:POETF) ("the
Company") - developer of the planar opto-electronic technology
(POET) platform for monolithic fabrication of integrated circuit
devices containing both electronic and optical elements on a single
semiconductor wafer - today announced the availability of the POET
Technology Design Kit (POET/TDK) documentation to the industry.
POET/TDK
POET/TDK provides complete documentation for the entire catalog
of active electronic and electro-optical devices currently
supported by the POET process. It comprises a comprehensive device
parameter library, and enables potential customers and partners -
including semiconductor foundries and device and library developers
- to implement the POET process.
As usage grows, POET/TDK is also expected to help licensed
designs in a POET device ecosystem to proliferate, and help
existing complementary metal-oxide semiconductor (CMOS) silicon
library functions optimize migration time to POET designs.
Mr. Peter Copetti, Executive Chairman and interim CEO, noted,
"Completion of the POET/TDK marks a critical step towards
commercialization and monetization of the Company's intellectual
property. We're extremely excited to be able to showcase our
game-changing technology to potential customers and partners in a
context specific to their own manufacturing framework."
While POET devices have already been successfully manufactured
and validated at a third-party foundry without using POET/TDK, its
availability now makes such technology migration much easier in the
future. POET/TDK and associated information is shared only under
non-disclosure agreements (NDA) with current and potential partners
and customers for the express purpose of evaluation of and
migration to the POET platform.
TCAD Simulation of Processes and Devices
Based on the TDK, Company staff and its tool partner are
currently using technology computer-aided design (TCAD) simulation
to develop and optimize specific semiconductor processing
technologies and devices of interest to other potential
partners.
Mr. Copetti added, "It's remarkable that the completion of the
TDK and the TCAD work with our tools partner was achieved by our
team - Dr. Geoff Taylor, Lee Shepherd and the POET team at the
University of Connecticut - in parallel with significant strides in
our 100-nm milestone, and research on the possibility of POET-based
quantum computing devices. We've set challenging milestones for
ourselves, and expect to continue to meet these challenges in our
drive towards our 'Powered by POET' vision."
The TCAD effort is geared towards developing the models
necessary to enable POET's technology into an industry-standard
design tool-flow. This design tool-flow is required to evaluate and
ultimately transfer POET's technology into manufacturers'
design-and-fabrication environments.
PET Advances
Specific TCAD efforts are focused on complementary
hetero-structure field-effect transistors (HFETs) and bipolar
transistors (HBTs), which form the basis for the first TDK release
focused on the planar electronic technology (PET), the electrical
subset of the POET process. It can support complementary HFET
(CHFET), bi-CHFET, bipolar and thyristor device fabrication. PET
offers lower cost and simpler process fab options for applications
that do not require the full optical feature set offered by
POET.
All of the electronic devices of the PET platform represent a
breakthrough in performance and power efficiency over existing
silicon CMOS technologies that exist today and on the industry
roadmap. The PET/TDK models are anticipated to be available to
third parties around the end of the third quarter 2014.
By enabling increased speed, density, reliability, power
efficiency, and much lower bill-of-materials and assembly costs,
the POET semiconductor platform is expected to provide disruptive
performance with an industry-compatible transition framework, and
positions the Company as a leader in the new generation of
companies defining the growth paradigm in the post-Moore's Law
world.
About POET Technologies Inc.
POET Technologies is the developer of the POET platform for
monolithic fabrication of integrated circuit devices containing
both electronic and optical elements on a single semiconductor
wafer. With head office in Toronto, Ontario, Canada, and operations
in Storrs, CT, the Company, through ODIS Inc., a U.S. company,
designs III-V semiconductor devices for military, industrial and
commercial applications, including infrared sensor arrays and
ultra-low-power random access memory. The Company has several
issued and pending patents for the POET process, with potential
high speed and power-efficient applications in devices such as
servers, tablet computers and smartphones. The Company's common
shares trade on the TSX Venture Exchange under the symbol "PTK" and
on the OTCQX under the symbol "POETF". For more information please
visit our websites at www.poet-technologies.com.
ON BEHALF OF THE
BOARD OF DIRECTORS
Michel Lafrance,
Secretary
Neither TSX Venture Exchange nor its Regulation Services
Provider (as that term is defined in the policies of the TSX
Venture Exchange) accepts responsibility for the adequacy or
accuracy of this release.
This news release contains "forward-looking information"
(within the meaning of applicable Canadian securities laws) and
"forward -looking statements" (within the meaning of the U.S.
Private Securities Litigation Reform Act of 1995). Such
statements or information are identified with words such as
"anticipate", "believe", "expect", "plan", "intend", "potential",
"estimate", "propose", "project", "outlook", "foresee" or similar
words suggesting future outcomes or statements regarding an
outlook. Such statements include the Company's expectations
regarding the anticipated availability of the PET/TDK and the
relative disruptive performance and power efficiency of the
Company's technologies over existing technologies.
Such forward-looking information or statements are based on
a number of risks, uncertainties and assumptions which may cause
actual results or other expectations to differ materially from
those anticipated and which may prove to be incorrect. Assumptions
have been made regarding, among other things, management's
expectations regarding future growth, plans for and completion of
projects by the Company's third party relationships, availability
of capital, and the necessity to incur capital and other
expenditures. Actual results could differ materially due to a
number of factors, including, without limitation, operational risks
in the completion of the Company's anticipated projects, delays or
changes in plans with respect to the development of the Company's
anticipated projects by the Company's third party relationships,
risks affecting the Company's ability to execute projects, the
ability to attract key personnel, and the inability to raise
additional capital. Although the Company believes that the
expectations reflected in the forward-looking information or
statements are reasonable, prospective investors in the Company's
securities should not place undue reliance on forward-looking
statements because the Company can provide no assurance that such
expectations will prove to be correct. Forward- looking information
and statements contained in this news release are as of the date of
this news release and the Company assumes no obligation to update
or revise this forward-looking information and statements except as
required by law.
Christopher ChuGrayling(646) 284-9426poet@grayling.com