Diodes Incorporated (Nasdaq: DIOD) today announced, at USB
Developer Days, the PI3DBS16222 crossbar switch for high-speed
differential and serial signals. Optimized for the latest
protocols, it provides an almost-universal solution to routing
high-speed signals up to 20Gbps around high-performance electronic
equipment, from personal computers and mobile devices to network
switch backplanes and high-end test tools.
With the increasing use of high-speed serial and differential
protocols, such as PCIe® 4.0, ThunderboltTM 3, SuperSpeed USB
20Gbps, and 10 GBase-KR, there is a growing demand for more
efficient solutions able to switch and route signals around PCBs
and between connectors and integrated circuits. Because these
signals now run at up to 20Gbps, any solution must operate without
impacting signal integrity or introducing delays or errors.
The PI3DBS16222 is a 4-channel, differential crossbar switch
with pass-through mode, configured in a 2 x 2 topology. It features
four differential pairs on the input side and four pairs on the
output side. A single control signal switches each input pair
between two output pairs while a separate enable input provides
input/output isolation with high impedance.
“Adoption of the USB Type-C® interface is growing exponentially
and facilitating the industry’s move to SuperSpeed USB 20Gbps
capable products,” said Jeff Ravencraft, President and COO of the
USB Implementers Forum. “Solutions such as the PI3DBS16222 provide
USB developers a valuable tool when designing high-speed signal
paths for new SuperSpeed USB 20Gbps applications.”
“Diodes Incorporated is proud to enhance our industry leading,
20Gbps Signal Mux family with our latest 4–channel, differential
crossbar switch,” said Kay Annamalai, Senior Marketing Director,
Diodes Incorporated. “Our crossbar switch operates with extremely
high -3dB bandwidth of 13GHz, leading to usage in high-speed
routing of signals that is growingly needed in mobile computing,
networking, and server/storage applications.”
The PI3DBS16222 operates at up to 20Gbps with excellent signal
integrity, enabling it to cover all of the mainstream protocols
today. The performance is enabled in part by Diodes Incorporated’s
use of silicon on insulator (SOI) technology, which drastically
reduces the effect of parasitic capacitances within the device,
directly contributing to increased performance.
The device is offered in the TQFN package measuring 2.5mm x
4.5mm and the X1QFN package measuring 2mm x 4mm. Its small size
makes the PI3DBS16222 suitable for use in space-constrained mobile
applications.
Diodes Incorporated will be exhibiting at USB Developer Days at
the Grand Hyatt, Seattle on September 17-18, 2019.
Further information is available at www.diodes.com.
USB Type-C® and USB-C® are registered trademarks of USB
Implementers Forum. PCI-SIG, PCI Express, and PCIe are trademarks
or registered trademarks of PCI-SIG.
Thunderbolt and the Thunderbolt logo are trademarks of Intel
Corporation or its subsidiaries in the U.S. and/or other
countries.
About Diodes Incorporated
Diodes Incorporated (Nasdaq: DIOD), a Standard and Poor’s
SmallCap 600 and Russell 3000 Index company, is a leading global
manufacturer and supplier of high-quality application specific
standard products within the broad discrete, logic, analog and
mixed-signal semiconductor markets. Diodes serves the consumer
electronics, computing, communications, industrial, and automotive
markets. Diodes’ products include diodes, rectifiers, transistors,
MOSFETs, protection devices, function-specific arrays, single gate
logic, amplifiers and comparators, Hall-effect and temperature
sensors, power management devices, including LED drivers, AC-DC
converters and controllers, DC-DC switching and linear voltage
regulators, and voltage references along with special function
devices, such as USB power switches, load switches, voltage
supervisors, and motor controllers. Diodes also has timing,
connectivity, switching, and signal integrity solutions for
high-speed signals. Diodes’ corporate headquarters and Americas’
sales office are located in Plano, Texas and Milpitas, California.
Design, marketing, and engineering centers are located in Plano;
Milpitas; Taipei, Taiwan; Taoyuan City, Taiwan; Zhubei City,
Taiwan; Manchester, England; and Neuhaus, Germany. Diodes’ wafer
fabrication facilities are located in Manchester and Greenock, UK,
and Shanghai, China. Diodes has assembly and test facilities
located in Shanghai, Jinan, Chengdu, and Yangzhou, China, as well
as in Hong Kong, Neuhaus and Taipei. Additional engineering, sales,
warehouse, and logistics offices are located in Taipei; Hong Kong;
Manchester; Shanghai; Shenzhen, China; Seongnam-si, South Korea;
and Munich, Germany, with support offices throughout the world.
Recent news releases, annual reports and SEC filings are
available at the Company’s website: http://www.diodes.com. Written
requests may be sent directly to the Company, or they may be
e-mailed to: diodes-fin@diodes.com.
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version on businesswire.com: https://www.businesswire.com/news/home/20190917005103/en/
Company Contact: Diodes Incorporated Emily Yang VP,
Worldwide Sales and Marketing P: 972-987-3900 E:
pressinquiries@diodes.com
Investor Relations Contact: Shelton Group Leanne K.
Sievers EVP, Investor Relations P: 949-224-3874 E:
lsievers@sheltongroup.com
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