STMicroelectronics Signs License and Cooperation Agreement on LDMOS Technology from Innogration
February 14 2018 - 9:01AM
·
Arrangement expands serviceable RF power market for ST
· Mature and
proven technology is very well suited for applications such as
wireless infrastructure; industrial, scientific, and medical;
avionics and radar; and non-cellular radio
Geneva, February 14, 2018 - STMicroelectronics (NYSE:
STM), a global semiconductor leader serving customers across the
spectrum of electronics applications, today announced it has signed
an agreement on LDMOS[1] RF power technology from Innogration
Technologies, a fabless semiconductor company headquartered in
Suzhou, China, specializing in the design and manufacturing of RF
power semiconductor devices, modules, and sub-system
assemblies.
Combining a short conduction-channel length with a high
breakdown voltage, LDMOS devices are well suited for RF power
amplifiers where they can be used in base stations for wireless
communications systems, as well as in the power amplifiers for
commercial and industrial systems. The agreement with Innogration
expands the range of applications that ST can address with LDMOS
technology.
Terms of the agreements were not disclosed.
About STMicroelectronics
ST is a global semiconductor leader delivering intelligent and
energy-efficient products and solutions that power the electronics
at the heart of everyday life. ST's products are found everywhere
today, and together with our customers, we are enabling smarter
driving and smarter factories, cities and homes, along with the
next generation of mobile and Internet of Things devices. By
getting more from technology to get more from life, ST stands for
life.augmented.
In 2017, the Company's net revenues were $8.35 billion, serving
more than 100,000 customers worldwide. Further information can be
found at www.st.com.
For Press Information Contact:
STMicroelectronics Michael Markowitz Director Technical Media
Relations +1 781 591 0354 michael.markowitz@st.com
[1] LDMOS - Laterally Diffused Metal Oxide Semiconductor
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