NXP Pushes the Limits of Solid-State RF Energy
June 20 2017 - 9:00AM
IMPI ANNUAL MICROWAVE POWER SYMPOSIUM -- NXP
Semiconductors N.V. (NASDAQ:NXPI), the number one supplier of RF
power transistors, today announced the industry’s highest power
transistor for 915 MHz applications. The MRF13750H transistor
delivers 750 W continuous wave (CW), fifty percent higher than
comparable products currently available on the market. Based on 50
V silicon LDMOS, this transistor extends the limits of solid-state
RF generation, making the MRF13750H an attractive alternative to
vacuum tubes for very high power industrial systems.
This transistor brings ease of use to microwave generator
designers. It delivers exceptional precision, control and
reliability compared to vacuum tube-era technologies such as
magnetrons. The MRF13750H supports accurate power control over the
full dynamic range from 0 to 750 W, and enables frequency shifting
that helps make precise use of RF energy. It is capable of
operating for decades, with minimal performance degradation over
time, lowering the total cost of ownership. It operates at 50 V,
for greater safety than magnetrons. Finally, the small size of a
solid-state power amplifier enables redundancy and flexibility of
design.
“The reliability and enhanced control features of solid-state
have long been understood, but industrial system designers had
difficulties combining many transistors to match the power level of
magnetrons — until now,” said Pierre Piel, senior director and
general manager for multi-market RF Power at NXP. “The MRF13750H
delivers performance that enables industrial heating engineers to
implement it in very high power systems.”
“Given the many advantages of solid-state RF energy as a highly
efficient and controllable heat and power source, the RF Energy
Alliance (RFEA) sees endless market opportunities for the
technology to improve existing RF energy applications as well as
enable new ones,” said Klaus Werner, Executive Director of the
RFEA. “The capabilities of the new MRF13750H will undoubtedly
accelerate the industry’s transition to solid-state RF
technology.”
This new transistor is designed for industrial, scientific and
medical (ISM) applications ranging from 700 to 1300 MHz, especially
industrial heating/drying, curing, and material welding, as well as
particle accelerators. It delivers 750 W CW at 915 MHz with 67
percent efficiency in a small 3 × 3.8 inch (7.6 × 9.7 cm)
pallet.
Availability The MRF13750H is sampling today
and will be in production in December 2017. The 915 MHz CW
reference circuit is available today. To access the data sheet and
for more information, visit www.nxp.com/MRF13750H.
About NXP Semiconductors NXP Semiconductors
N.V. (NASDAQ:NXPI) enables secure connections and infrastructure
for a smarter world, advancing solutions that make lives easier,
better and safer. As the world leader in secure connectivity
solutions for embedded applications, NXP is driving innovation in
the secure connected vehicle, end-to-end security & privacy and
smart connected solutions markets. Built on more than 60 years of
combined experience and expertise, the company has 31,000 employees
in more than 33 countries and posted revenue of $9.5 billion in
2016. Find out more at www.nxp.com.
NXP and the NXP logo are trademarks of NXP B.V. All other
product or service names are the property of their respective
owners. All rights reserved. © 2017 NXP B.V.
For more information, please
contact:
Americas |
|
Greater China/Asia |
|
Europe |
Joon Knapen |
|
Esther Chang |
|
Martijn van der Linden |
Tel: ++31619303857 |
|
Tel: +886 2 8170 9990 |
|
Phone: +31 6 1091 4896 |
Email: joon,knapen@nxp.com |
|
Email: esther.chan@nxp.com |
|
Email: martijn.van.der.linden@nxp.com |
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